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The silicon metal-oxide–semiconductor field-effect transistor (MOSFET) prepared via a hot wire implantation doping technique is reported in this letter. Auger electron spectroscopy results indicate that the junction depth of the phosphorus was $\sim 80$ nm. It was also found that the carrier concentration of the phosphorus was $\sim 5.83 \times 10^{\mathrm {\mathbf {20}}}~\mathrm{cm}^{\mathrm {\mathbf {-3}}}$ ...
In current chip and package designs, it is a bottleneck to simultaneously optimize both pin assignment and pin routing for different design domains (chip, package, and board). Usually the whole process costs a huge manual effort and multiple iterations thus reducing profit margin. Therefore, we propose a fast heuristic chip-package co-design algorithm in order to automatically obtain a bump assignment...
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