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The characteristic of ID-VDS curve is related by applying voltages to Schottky gate in AlGaN/GaN HEMTs. The measurement of drain and source resistances shown that the current increase was caused by inducing the 2DEG charge between drain and source electrodes. In this study, we evaporate different configurations of contacts to analyze its ID-VDS characteristics.
The purpose of this work was to develop a TCAD device model to study the electrical and thermal characteristics of the AlGaN/GaN HEMT in the time domain in contrast to a DC thermal equilibrium analysis. We first examined a channel temperature technique that utilizes temperature dependence of gate voltage on gate current to predict channel temperature. The predicted channel temperature of Method 3104...
High-performance internally-matched GaN HEMT with 0.3 mum gate length and 4times2.5 mm of the total gate width was successfully fabricated. The large signal RF characteristics of the internally-matched device were measured at 8 GHz. A maximum output power of 64.5 W, a gain of 7.2 dB and a peak power-added efficiency (PAE) of 40% was obtained, respectively.
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