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InxAl(1−x)N (InAlN) thin films, lattice-matched to GaN with an In composition of ∼17%, are of interest for GaN-based devices. However, InAlN thin films grown by molecular beam epitaxy exhibit a characteristic lateral composition modulation, or nanocolumnar microstructure, with an Al-rich center region and an In-rich boundary. The mechanism driving the formation of this microstructure...