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ArF photoresist (PR) and BARC together are being adopted as a LDD (lightly doped drain) implantation blocking layer for applications with smaller CD and larger aspect ratio. BARC open process is followed by a plasma etch process. In this work, the BARC open etch process was performed using a commercial etch system equipped with bias pulsed plasma. The effects of continuous wave (CW) and bias RF pulsed...
A 2-D simulation system based on a 2-D dynamic cellular automata method, integrating aerial image simulation, exposure simulation, post-exposure bake simulation, and development simulation modules is presented for inclined ultraviolet (UV) lithography processes of thick photoresists such as SU-8 photoresists. To verify the simulation system, a series of experiments have been performed for SU-8 2000...
A two-dimensional (2D) simulation system is developed for the ultraviolet (UV) lithography process of thick SU-8. A series of simulations and experiments have been conducted to verify the simulation system and to study the effects of different lithography parameters on the line width deviations and sidewall profiles of the SU-8 microstructures. All studies are carried out on SU-8 2075 layers under...
A three-dimensional (3D) profile simulator that integrates aerial image module, exposure module, post-exposure bake (PEB) module and development module is presented in this paper for the inclined/multi-directional ultraviolet (UV) lithography of negative thick photoresist such as SU-8. Based on the scalar diffraction theory, the improved paraxial approximation and Fresnel approximation solutions are...
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