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This paper reports a combination structure of temperature and voltage sensor in a 16nm FinFET technology. The circuit transforms PTAT voltage across a resistor into an output clock with PTAT pulse-width. Fabricated in a 16nm CMOS, the temperature sensor achieves 1°C resolution over −10 ∼ 90°C range and the voltage sensor achieves 4mV output error over 0.38V to 0.56V. The total chip size is 0.01mm2...
Two sets of light-emitting diodes (LEDs) based on two epitaxial structures of different p-GaN layer thicknesses for demonstrating the effects of localized surface plasmon (LSP) coupling with the quantum wells (QWs) in the LEDs are compared. In the first set based on the epitaxial structure of thick p-GaN, to reduce the distance between the Ag nanoparticles (NPs) and QWs for increasing the LSP coupling...
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