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The use of resonant tunneling (RT) barriers in the design of quantum dots-in-a-well (DWELL) infrared photodetectors is reported. The design of RT barriers for a variety of goals has been discussed. For simple DWELL designs, we demonstrate 2-3 orders-of-magnitude reduction in the dark current, with significant increase in the specific detectivity (D*) of the device. Two RT barriers are designed to...
In summary, the specification of energy levels and size dependence of energy level properties in InAs/GaAs quantum dots (QDs) were studied by using deep-level transient spectroscopy (DLTS) with very small pulse and varying the bias. It appears that the small sized InAs QDs have only one energy state with 121 meV below conduction band edge of GaAs barrier but the large sized QDs have several levels...
Continuous-wave (CW) THz generation from InGaAs based photomixers has been demonstrated by using a tunable dual-wavelength 3-section DFB laser diode as the optical beat source. The wavelength of each lasing mode can be tuned by adjusting currents in micro-heaters which are fabricated on the top of the each DFB section. The CW THz frequency emitted from the InGaAs photomixers is continuously tuned...
We report the first successful demonstration of a two color, co-located infrared focal plane array based on novel InAs/InGaAs quantum dots-in-a-well photodetectors. Two distinct responses (lambda iota ~ 4.5 mum and lambda 2 ~8.5 mum) were observed under 300 Kf2 irradiance.
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