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In summary, the specification of energy levels and size dependence of energy level properties in InAs/GaAs quantum dots (QDs) were studied by using deep-level transient spectroscopy (DLTS) with very small pulse and varying the bias. It appears that the small sized InAs QDs have only one energy state with 121 meV below conduction band edge of GaAs barrier but the large sized QDs have several levels...
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