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Presented is a novel half Gb DRAM device for 3D stacked systems utilizing TSV. It is designed through the use of a new computer-aided design methodology and which realizes 819 Gb/s bandwidth across 16 channels and <10ns read latency on a 45nm DRAM process. The architecture is based on small subarrays with short WL and BL to realize the low latency and energy efficiency. We also integrated several...
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