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Although III-V semiconductors have intrinsically higher electron mobility compared to Si, a high-quality gate stack with low Dit is still required to realize III-V surface channel MOSFETs. Recently, significant effort has been focused on improving high-k/III-V interfaces using different interfacial passivation layers (IPL) and surface passivation techniques. These include MBE deposition of Ga2O3(Gd...
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