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Optimization of halo profile for advanced MOSFET device is known to be very critical and challenging. Halo profiles around channel can cause carrier mobility degradation, leakage and higher Vt mismatch. Indium and high scattering P-type dopant (HS-P) mixed halo formation have been used widely for n-FET devices. Gallium has a better activation than Indium and is heavier specie than HS-P. Gallium could...
Polycrystalline silicon has attracted our interest for their applications. Its electrical characteristics are closely correlated to the crystalline structure after electrical activation. The parameters related to crystalline structure are strongly influenced by implant and annealing techniques. We investigate the influence and sensitivity of implant / annealing / microstructure / mobility on sheet...
Hematite particles were synthesized by oxidation of nanoparticles through heat treatment in the atmosphere of 95% plus 5% . This method can result in an effective fabrication of high-coercivity particles. The Morin transition of the as-prepared ...
Transverse optical confinement in zinc oxide (ZnO) random cavities on Si substrate is achieved by a self-generated zinc silicate (Zn2SiO4) layer formed between the interface of ZnO and Si after thermal annealing.
Current-induced breakdown phenomena of carbon nanofibers (CNFs) for future on-chip interconnect applications are presented. The effect of heat dissipation via the underlying substrate is studied using different experimental configurations. Scanning electron microscopy (SEM) techniques are utilized to study the structural damage by current stress. While the measured maximum current density in the suspended...
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