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A fully selfconsistent, coupled electro-thermo-mechanical model for nitride-based devices is presented and applied to a high-power AlGaN/GaN High Electron Mobility Transistor (HEMT). The influence of converse piezoelectric effect, thermal stress and of the selfconsistent coupling on the static device characteristics and on the stress distribution in the device is studied.
Quantum dot (QD) systems based on III-nitride have recently shown to be very promising nanostructures for high-quality light emitters. In this work, electronic and transport properties of AlN/GaN QDs are investigated by means of the TIBERCAD software tool, which allows both a macroscopic and an atomistic approach, with the final aim to couple them in a multiscale simulation environment.
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