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In this paper, we present a framework for the simulation of electronic devices based on a multiscale and multiphysics approach. A formal description is provided that includes both multiscale and multiphysics problems and which can be linked to already established multiscale methods. We present a set of simulations of an AlGaN/GaN nanocolumn based on a multiscale coupling between atomistic descriptions...
In this work we present a multiscale method to model self-heating effects in nanostructured devices. While the heating is modeled within the drift-diffusion approximation, the heat dissipation is computed by means of a concurrent coupling between a Phonon Boltzmann Transport Equation (PBTE) based method and the Fourier model. We develop the way to connect the two models to each other and apply the...
Calculations of optoelectronic properties of a GaN quantum dot embedded in an AlGaN nanocolumn are presented, using the TiberCAD simulator. The calculations emphasize the role of the growth direction in determining the quantum efficiency of such light emitting devices. Multiband kldrp is used, with corrections from drift diffusion and strain calculations. Results are discussed using an empirical tight...
Quantum dot (QD) systems based on III-nitride have recently shown to be very promising nanostructures for high-quality light emitters. In this work, electronic and transport properties of AlN/GaN QDs are investigated by means of the TIBERCAD software tool, which allows both a macroscopic and an atomistic approach, with the final aim to couple them in a multiscale simulation environment.
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