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This year marks the 40th anniversary of the invention of the first beam-lead device by Lepselter et al. Lepselter and coworkers proposed a method of fabricating a new semiconductor device structure and its application to high-frequency silicon switching transistors and ultra-high-speed integrated circuits. Beam-lead technology, also known as air-bridge technology, has established itself for its unsurpassed...
Magnetic field-assisted assembly is an integration technique for the efficient placement of a large number of nanodevices into receptor sites etched in semiconductor wafers with or without circuitry. The diverging flux from a magnetic field source helps in attaching heterostructure nanodevices into wafers. Various approaches of magnetic field-assisted assembly using air pressure, vibration assistance,...
Tantalum silicide (TaSi2) thin films were sputter deposited on p- and n-type silicon substrates using ultrapure TaSi2 targets. The TaSi2/Si samples were annealed in nitrogen or forming gas or oxygen containing steam at temperatures in the range of 400–900°C. The sheet resistances of TaSi2/Si were measured by four-point probe before and after anneal. The structure of these films was investigated using...
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