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In this study, real time spectroscopic ellipsometry (RTSE) has been applied for in-situ monitoring of the first stage of copper indium-gallium diselenide (CuIn1−xGaxSe2; CIGS) thin film deposition by the three-stage co-evaporation process used for high efficiency photovoltaic (PV) devices. The first stage entails the growth of indium-gallium selenide (In1−xGax)2Se3 (IGS) at a temperature of 400°C...
In situ and ex situ characterization methods have been used in order to investigate the growth as well as the physical and chemical properties of (Ag, Cu)InSe2 (AgCIS) thin films deposited by direct current (dc) magnetron sputtering. Data acquired by real time spectroscopic ellipsometry (RTSE) were used to extract growth parameters such as thickness and surface roughness. A study of the growth parameters...
The CuIn1−xGaxSe2 (CIGS) growth process, as well as the fundamental optical transitions, at the growth temperature of 570 °C have been studied for various x = Ga/(In+Ga) ratios. Data acquired by spectroscopic ellipsometry in real time (RTSE) were used to extract this information which was then correlated with ex situ techniques such as AFM, SEM etc. The roughness extracted from RTSE indicates that...
This study focuses on the development of an optical property database through spectroscopic ellipsometry analysis of II–VI polycrystalline alloy thin films for tandem photovoltaics. The materials of interest for the active layer components in this application include top cell Cd1-xMgxTe and bottom cell HgxCd1-xTe. Such materials are being explored for use in current-matching two-terminal -- as well...
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