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In this letter, we present SONOS nonvolatile memory device with gate-all-around polycrystalline silicon (poly-Si) nanowire channel. The SONOS memory cell with 23-nm nanowire width, fabricated using top-down CMOS process, exhibits fast programming and erasing speed as well as improved subthreshold behavior of the transistor. Both the memory and transistor characteristics are dependent on the nanowire...
We present vertical gate-all-around (GAA) silicon nanowire transistors on bulk silicon wafer utilizing fully CMOS compatible technology. High aspect ratio (up to 50:1) vertical nanowires with diameter down to ~ 20 nm are achieved from lithography and dry-etch defined Si-pillars with subsequent oxidation. The surrounding gate length is controlled using etch back of the sacrificial oxide. n- and p-MOS...
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