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The enhanced oxidation of Cu on Ru/diffusion barriers was observed. The in-situ X-ray diffraction results reveal that the Cu oxidation can be inhibited by doping C in either Ru adhesion layer or TaN barrier layer. The RuC/barrier becomes more robust with certain amount of C doped in Ru. ALD Cu2O on the RuC substrate was carried out and the effect of C on reduction of Cu oxide was observed.
Ru thin films were sequentially deposited onto TaN (5 nm) by plasma enhanced atomic layer deposition using Ru(EtCp) 2 and NH 3 as precursors. The effect of growth temperature on the electrical resistivity and morphology of the Ru films were studied. It was found that the Ru films can achieve a low resistivity of 14 µΩ cm and a low root-mean-square roughness at a growth temperature...
High quality Ru thin film with low electrical resistivity (10~14 ????cm) was successfully deposited on the Si, atomic layer deposition (ALD) grown TiN(2nm)/Si and ALD TaN(5 nm)/Si substrates by using plasma enhanced atomic layer deposition (PEALD). Different growth mode and crystallization behavior were observed for the Ru films grown on these different substrates. Results show that the lowest surface...
The properties of the ruthenium (Ru)/ TaN as copper diffusion barrier in copper low dielectric constant material(low-k) metallization were studied by sheet resistance, X-ray diffraction (XRD), X-ray photoelectron spectroscopy(XPS), transmission electron microscopy (TEM) and electrical current leakage-voltage tests. Cu, Ru and TaN thin films were deposited by ion beam sputtering technique. Sheet resistance...
Carbides of refractory metals have been used as diffusion barriers due to their high melting point and good thermal and mechanical stability. In this work binary WC films have been investigated as Cu diffusion barriers by using ex-situ sheet resistance (Rs), X-ray diffraction (XRD) measurement and in-situ laser light scattering measurements. It was found that the WC film has stronger oxidation resistance...
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