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By surmounting various obstacles across the spectrum from material synthesis to device fabrication and circuit considerations, we provide a solid foundation so that carbon-based technology can move forward towards the vision of engineering VLSI circuits, but further research is still needed to realize the material potential such as higher density CNT synthesis, better metal to CNT/graphene contacts,...
Carbon nanotube field-effect transistors (CNFETs) show big promise as extensions to silicon-CMOS because: 1) Ideal CNFETs can provide significant energy and performance benefits over silicon-CMOS, and 2) CNFET processing is compatible with existing silicon-CMOS processing. However, future gigascale systems cannot rely solely on existing chemical synthesis for guaranteed ideal devices. VLSI-scale logic...
Metallic carbon nanotubes (CNTs) pose a major barrier to the design of digital logic circuits using CNT field-effect transistors (CNFETs). Metallic CNTs create source to drain shorts in CNFETs, resulting in undesirable effects such as excessive leakage and degraded noise margins. No known CNT growth technique guarantees 0% metallic CNTs. Therefore, special processing techniques are required for removing...
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