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We show that the conventional nonparabolic approximation of real band structures can be modified and generalized to approximate the complex band structures of common semiconductors with a significant improvement of accuracy against the parabolic approximation. The improvement is due to the inherent elliptic nature of the complex band structures in the vicinity of the bandgap, which has a critical...
The main challenges for Tunnel FETs are experimentally demonstrating SS<60 mV/dec, high ON currents and solving their ambipolar behavior. We have experimentally demonstrated a Double-Gate, Strained-Ge, Heterostructure Tunneling FET (TFET) exhibiting very high drive currents and SS<60 mV/dec. Due to small bandgap of s-Ge and the electrostatics of the DG structure, record high drive current of...
For the first time, the performance of uniaxial- and biaxial- strained InxGa1-xAs NMOS double gate FETs (DGFET) with (111) and (001) orientations are thoroughly investigated under ballistic transport, taking into account non-parabolic full band structure, quantum effects, band-to-band tunneling (BTBT) and short-channel effects (SCE). The real and complex band structures for different composition,...
InxGa1-xAs is a very promising candidate for future NFETs. The performance tradeoffs in biaxial-strained In0.75Ga0.25As and GaAs NMOS DGFETs have been thoroughly investigated under ballistic transport, taking in to account non-parabolic full band structure, quantum effects, BTBT and SCE. The real and complex band structures for (001)/(111) orientations and biaxial tensile/compressive strains are calculated...
Due to their extremely high electron mobility (mu), III-V materials are being investigated as channel materials for high performance NMOS. Although their small transport mass leads to high injection velocity (vinj), they have a low density of states (DOS) in the Gamma-valley, tending to reduce the inversion charge (Qinv) and hence reduce drive current. Furthermore, the direct band gaps of III-V materials...
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