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Amorphous indium-gallium-zinc-oxide thin film transistor (a-IGZO TFT) was used as active driving device for ZnO nanowire field emitters. The characteristics of ZnO FEAs controlled by a-IGZO TFT were studied. Low driving voltage, precise control and stabilization of field emission current are achieved.
The feasibility of preparation of nanowire on glass favors the realization of large area devices, which makes nanowire field emitter arrays (FEAs) good candidate for large-area vacuum microelectronics applications. In this study, a coaxial gated ZnO nanowire FEAs was fabricated. Effective emission current modulation by the gate voltage was achieved and the addressing capability was demonstrated.
Field emission from a MOSFET-controlled ZnO nanowire (NW) cathode is reported. The emission current was modulated in four orders of magnitude (from 0.2 nA to 1.15 ) by tuning the MOSFET gate voltage from 0.8385 to 1.5255 V. The modulation of the emission current showed an exponential relationship with the MOSFET gate voltage. The MOSFET control can dramatically reduce the emission current...
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