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Strain techniques have been adopted and widely used in the advanced nodes since early 65nm for carrier mobility improvement. For PMOS, eSiGe incorporation in the SD is the process of choice to induce compressive strain in the channel for mobility improvement. To further lower the contact resistance, it is preferred to boost Boron concentration for pSD formed by eSiGe process. Normal implant process...
InSbN alloys are the new narrow bandgap semiconductors capable of broadband and long wavelength infrared photodetection. This paper reports the annealing conditions on the properties and quality of InSbN alloys, fabricated by multi-step ion implantation. The InSbN samples were annealed at different annealing methods, temperatures, and periods of time. They were characterized by various techniques,...
The behavior of transition metals in ZnO has become an important topic for spintronics. As the fundamental property, the nano-structural characteristics of the transition metal implanted ZnO have been studied. It is clearly observed that in ZnO the Mn+ implantation and post-annealing result in (1) the formation of crystallographically orientated Zn nanocrystals within the ZnO matrix and (2) Mn atoms...
The temperature dependant electrical properties of InSbN alloys fabricated by directly nitrogen ion implanted into InSb substrate are investigated using Hall effect measurement. Intrinsic behavior is observed in the high temperature range (180-300 K). Higher nitrogen doping level and annealing temperature will result in lower electron carrier concentration. Phonon scattering dominates.
Due to the band anti-crossing effect by the high-lying nitrogen (N) resonant state, the InSbN alloys show markedly smaller energy band gap. This, together with their long Auger life, makes the alloys the best candidate for long wavelength infrared. We have fabricated a set of InSbN alloys by directly nitrogen implantation into the InSb substrate and characterize them with various facilities after...
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