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Zinc oxide (ZnO) films were grown on (11-20) sapphire substrates at 600 °C by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O). A ZnO buffer layer was deposited at low temperature (LT) prior to the growth of a bulk ZnO film for a typical growth run. In some cases, buffer-layer annealing or post-annealing treatments were employed to optimize ZnO growth. Based on the experimental...