The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Total photoyield spectroscopy (TPYS) was applied to investigate the evolution of hydrogen-related defect states in amorphous In-Ga-Zn-O (a-IGZO) thin films. It was found that the defect states located at around 4.3 eV from the vacuum level were formed as a result of hydrogenation. After thermal annealing at 300 °C, the onset of the TPYS spectra shifted to 4.15 eV. As the annealing temperature was...
Effects of etch stop layer (ESL) deposition conditions on stress stabilities in amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) were investigated. The performances of the a-IGZO TFTs were varied depending on the flow rate of SiH4/N2O in chemical vapor deposition (CVD) of ESL. The threshold voltage shift after positive bias thermal stress test was decreased with increasing the flow rate...
We report on the low-frequency noise performance of niobium dc superconducting quantum interference devices (SQUIDs), which contain nanobridges fabricated by focused ion beam lithography as the active Josephson elements. The devices have feature sizes down to 70 nm. We have measured devices of different loop sizes in two readout configurations: nano-scale loop sizes in small signal mode using a series...
The physical properties of amorphous In-Ga-Zn-O (a-IGZO) films deposited by DC sputtering with various sputtering pressure were investigated. In accordance with improvement of the transistor performances such as saturation mobility (μSAT) and sub-threshold swing with a lowering the sputter pressure, we found that the sputtering pressure affected various physical properties of a-IGZO film. The lower...
Electronic structures in amorphous In-Ga-Zn-O (a-IGZO) were investigated using metal-oxide-semiconductor (MOS) diodes in terms of dependence on gate insulators (G/I). Thin film transistors (TFTs) with the same gate structure were fabricated to correlate the electronic properties with the TFT performances. From the capacitance-voltage characteristics and transient capacitance response, the space-charge...
Steady-state DC current vs. voltage characteristics of polyethylene terephthalate(PET) in a high temperature region are investigated. The sublinear I–V behavior is observed, and it is closely related to neutralization of mobile ions at PET-electrode metal interfaces. Steady-state DC I–V characteristic is analyzed using a model of the cyclic motion of ionic particles due to neutralization of mobile...
Many researchers have investigated the space charge injected into insulators. However, our understanding of space charge phenomena is far from complete. In the present paper, total quantity and mean spatial depth of space charge injected into polyethylene films are measured by the technique of Thermally Stimulated Charge Decay (TSCD). The electric fields at electrode-film interfaces are evaluated.
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.