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This work considers the effect of chromium surface segregation for polycrystalline Cr-doped TiO2 on surface vs. bulk defect disorder. It is shown that annealing of Cr-doped TiO2 (0.04 at% Cr) in the gas phase of variable oxygen activity at 1273 K results in a gradual transition in the valence of chromium at the surface from predominantly Cr3+ species in reduced conditions, p(O2) = 10−12 Pa, to comparable...
The present work determined the effect of chromium segregation on surface and near-surface composition of Cr-doped TiO 2 (0.05 at.% Cr) after annealing in oxidising and strongly reducing environments at 1,073 and 1,273 K. The segregation-induced depth profiles were determined by secondary ion mass spectrometry (SIMS). It was observed that annealing in oxidising conditions [p(O ...
The present work studied the self-diffusion coefficient of 93Nb in Nb-doped TiO2 single crystal (4.3 at.% Nb) at high oxygen activity [p(O2) = 21 kPa] over the temperature range 1,073 to 1,573 K. The diffusion-induced 93Nb concentration profile was determined by using secondary ion mass spectrometry (SIMS). The subsequently determined self-diffusion coefficient of 93Nb exhibits the following temperature...
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