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Nanoelectronic devices based upon self-assembled semiconductor nanowires are excellent research tools for investigating the behavior of structures with sub-lithographic features as well as a promising basis for future information processing technologies. We describe two unique approaches to successfully fabricate nanowire devices, one based upon harvesting and positioning nanowires and one based upon...
The VO2 nanowires were grown on Si3N4/Si substrate by a vapor transport method. Single crystalline rectangular structure of VO2nanowires is verified by scanning electron microscopy and transmission electron microscopy. Individual VO2 nanowires were fabricated into field effect transistors (FETs). Electrical transport properties are extracted from these nanowire FETs.
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