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Cut-off frequency (fT) of 300 GHz and 230 GHz for NMOS and PMOS is demonstrated for transistors with a gate length of 35 nm fabricated by 45 nm standard CMOS technology. Current gain (H21) and noise (flicker and thermal) is improved with scaling down technology. Power gain (Gu) increase is slow down and even saturated at 45 nm as technology advances. Such saturation in power gain is attributed to...
Effects of parasitic capacitance, external resistance, and local stress on the radio-frequency (RF) performance of the transistors fabricated by 65-nm CMOS technology have been investigated. The effect of parasitic capacitance, particularly Cgb, becomes significant due to the reduced spacing between the gate and the substrate contact (SC) in proportion to scaling down. Current drivability (Idsat)...
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