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This paper presents a newly developed trench gate IGBT which utilizes the split gate structure. It can realize both low Miller capacitance and high Injection Enhancement (IE) effect. The Miller capacitance has been reduced to 1/10 compared to that of the general trench gate structure with floating p-base. As a result, the turn-on power dissipation has been reduced by about 10% under the same turn-on...
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