The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this work, Ge MOS capacitors with HfTiON as high-k gate dielectric are fabricated. The impacts of different annealings in wet N2, wet NH3, wet N2O and wet NO on the electrical and reliability properties of Ge MOS capacitors are investigated. Experimental results show that the wet NO annealing produces the best electrical properties and reliability for the Ge MOS devices.
Germanium MOS capacitors with high-quality gate dielectrics are fabricated by novel processing in wet ambients. Wet NO oxidation with wet N2 annealing is used to grow GeON gate dielectric on Ge substrate. As compared to dry NO oxidation, negligible growth of unstable GeOx interlayer and thus a near-perfect GeON dielectric can be obtained. This idea is extended to high-k gate dielectric (HfTiON), which...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.