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Diamond is in principle the highest performance widegap semiconductor. Its outstanding electronic and thermal properties make it an attractive material for high power radiofrequency (RF) and microwave electron devices. In this paper, the authors present RF power measurements of submicron H-terminated FETs on polycrystalline diamond up to 2 GHz, showing the potential of such substrate for the development...
Metal-Semiconductor field effect transistor (MESFETs) were fabricated on hydrogen-terminated polycrystalline diamond. Fabricated MESFETs typically showed high drain-source current (140 mA/mm) and large transconductance values (60 mS/mm), with a cut off frequency fT=10 GHz and a maximum oscillation frequency, fMAX, up to 35 GHz. These values suggest device microwave operation in the K- band and are...
We introduce an advanced and optimized cryogenic cooling concept featuring minimum coolant inventory requirements for small high temperature superconducting (HTS) magnets based on results obtained with an experimental model. Experience gained from these experiments led to a new design that will be experimentally verified by the end of this year. Winding of the HTS magnet has already begun and will...
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