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It is convenient at this point to recall the virtual design loop concept introduced in Chap. 1, which aids the development process of future power management technologies. Throughout the previous chapters, this idea has been realized with the use of dedicated device and circuit models that, in combination with a series of optimization guidelines, represent the cornerstones of the adopted analysis...
This chapter describes the model level 0 introduced in the previous chapter. One main goal is to provide the reader with sufficient knowledge on the adopted modeling approach, characteristics, basic structure, advantages, and drawbacks of its use and associated analysis methods.
The SRBC has been studied as a power solution to fulfill the energy demands of next generation computer microprocessors. A number of relevant technology performance requirements have been identified that, once available, will make the SRBC-based multiphase architecture a potential candidate to power modern desktop, workstation, and server CPUs in the years to come.
The accurate performance predictions of model level 0 are achieved by means of rather complex circuit representation techniques of both power MOSFETs and converter circuit. Consequently, the resulting nonlinear equivalent network can only be resolved by numerical methods usually involving high processing power and long simulations times.
The proposed PLA model of Chap. 2 aids the derivation of power loss expressions that constitute model level 2 (see Sect. 1.4). While some of these equations have already been presented in the previous chapter, new ones will be derived in this chapter by way of simplifying and combining several of the analytical equations of the PLA model.
The challenges of powering modern computer microprocessors are so relevant that major advances in the power electronics industry are motivated by the evolution of the energy consumption of CPUs. So much so, that recent innovations in low voltage semiconductor technology, packaging, integration, control schemes and system architectures have been vastly conditioned by the energy needs of the microprocessor...
This chapter presents a systematic approach for the design of main components of the VR, namely the input/output filters, gate drivers, and power switches. Regarding control schemes, the nonlinear hysteretic control approach is selected to fulfill the high bandwidth requirements imposed by the load transients. This selection will strongly condition the dynamic operation of the converter as well as...
Voltage Regulators for Next Generation Microprocessors by: Toni López Reinhold Elferich Eduard Alarcón This book deals with energy delivery challenges of the power processing unit of modern computer microprocessors. It describes in detail the consequences of current trends in miniaturization and clock frequency increase, upon the power delivery unit, referred to as voltage regulator. This is an invaluable...
Zero voltage switching (ZVS) of the half bridge inverter is analyzed regarding nonlinear transistor output capacitances. A general method is described to derive an equivalent linear switch node capacitance from the transistors' CV characteristics that accurately models the commutation energy. The nonlinearity depends on device technology and can have a strong impact on the equivalent capacitance and...
This paper describes a method to identify and assess power loss mechanisms in power MOSFETs for switched circuits. An accurate behavioural MOSFET model is employed in a circuit simulator to analyse the performance of a trench MOSFET technology. A synchronous buck converter for point of load applications underlies the study of MOSFETs' switching behaviour. The methodology aims at the derivation of...
<para> A technique for measuring the static output characteristics of high-current power metal–oxide–semiconductor field-effect transistors is presented. The approach aims at the mitigation of self-heating, which is the source of significant measurement errors in modern commercial curve tracers. The technique is based on the principle of stimulation by means of voltage ramps that allow for fast...
A technique for measuring the static output characteristics of high current power MOSFETs is presented. The approach aims at the mitigation of self-heating, which is the source of significant measurement errors in modern commercial curve tracers. The technique is based on the principle of stimulation by means of voltage ramps that allow for fast transient measurements. This however implies the excitation...
This paper describes a method to identify and assess power loss mechanisms in power MOSFETs for switched circuits. An accurate behavioural MOSFET model is employed in a circuit simulator to analyse the performance of a trench MOSFET technology. A synchronous buck converter for point of load (PoL) applications underlies the study of MOSFETs' switching behaviour. The methodology aims at the derivation...
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