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We propose the combination of magnetoresistance (MR) and Pseudo-MOSFET (Psi-MOSFET) measurements as an improved method for the characterization of silicon-on-insulator (SOI) materials. Measurements were performed on ultrathin SOI Psi-MOSFETs with Corbino geometry by applying high magnetic field and substrate biasing. Several models and extraction methods are developed and compared for an accurate...
A HgCdTe/CdTe system is investigated for use in distributed Bragg reflectors. The modelled performance is described, and compared to an as-grown structure. As-grown 15 layer structures with arithmetically varying layer thickness are also annealed at 250degC and performance re-evaluated at 2, 7 and 24 hours anneal times. There is some shifting of the absorption edge after annealing , and some degradation...
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