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Iodine (I) doping in mercury cadmium telluride (Hg1−xCdxTe) grown by molecular beam epitaxy (MBE) on CdZnTe substrates with cadmium-iodide (CdI2) as the dopant source was investigated. I doping concentration in the samples was controlled by CdI2 source temperature that varied in 110°C–150°C range. Depending upon I doping concentration, the electrical conductivity at 77K for as grown films varied in...
In this paper we study the performance of uniformly doped graphene nanoribbon FET (GNRFET). Three-dimensional quantum mechanical simulations based on the NEGF formalism have been used in the presence of electron-phonon interaction to study the performance of GNRFET. We found out that uniformly doped GNRFET increases the mobility and performance of GNRFET device compare to conventionally undoped graphene.
Extrinsic p-type doping of Mercury Cadmium Telluride (HgCdTe) epilayers grown by Molecular Beam Epitaxy (MBE) was carried out with an arsenic (As) cracker cell. As-grown samples were characterised via Fourier Transform Infrared Transmission Spectrometry (FTIR) and Secondary Ion Mass Spectrometry (SIMS). A preliminary study on various activation annealing techniques is made, where HgCdTe layers were...
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