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This paper reports on a frequency agile GaN LNA MMIC that can be reconfigured for both S- and X-band extending operation over multiple octaves of frequency. The LNA is based on a 0.15um GaN HEMT technology and utilizes GaN FET switches to tune the LNA for 3–3.5 GHz Sband and 9–11 GHz X-band operation. Switch tuned for Sband, the amplifier achieves 15 dB of gain, NF ranging from 0.9–1.3 dB, an input...
Organizations like Mozilla, Microsoft, and Apple are floodedwith thousands of automated crash reports per day. Although crash reports contain valuable information for debugging, there are often too many for developers to examineindividually. Therefore, in industry, crash reports are oftenautomatically grouped together in buckets. Ubuntu’s repository contains crashes from hundreds of software systemsavailable...
This paper describes the design and measured performance of two high efficiency Ka-band 32 - 38 GHz power amplifier MMICs fabricated with an advanced 0.15μm Gallium Nitride (GaN) HEMT technology process. The process features a 50μm thin Silicon Carbide (SiC) substrate and compact transistor layouts with individual source via (ISV) grounding. The designs utilize an optimum transistor arrangement with...
This paper presents a novel method using the principles of even-odd mode analysis to derive the scattering parameters of the even-mode and odd-mode circuit decompositions of a symmetric circuit solely from its known scattering parameters. This eliminates the need for the microwave designer to perform additional simulations to obtain the even-mode and odd-mode circuits once the full circuit S-parameters...
A project's documentation is the primary source of information for developers using that project. With hundreds of thousands of programming-related questions posted on programming Q&A websites, such as Stack Overflow, we question whether the developer-written documentation provides enough guidance for programmers. In this study, we wanted to know if there are any topics which are inadequately...
An ultra wideband MMIC low noise amplifier (LNA) based on the 0.15-μm pHEMT 3MI Triquint power process has been demonstrated. A feedforward noise cancellation technique was employed to reduce the thermal noise in the LNA. The LNA has a surface area of 2 mm by 2 mm. The gain of LNA is 15 dB between 400 MHz and 12.5 GHz with ±0.3dB gain flatness across the band. The return loss at both input and output...
Gallium nitride (GaN) technology is transforming RF monolithic microwave integrated circuits (MMICs) for power amplifiers (PAs), switches, low noise amplifiers, and more. Vendors are now producing GaN MMICs in volume and achieving outstanding performance. GaNs characteristics enable PA MMICs with 35 times the output power of GaAs alternatives or much smaller die sizes from L-band through Ka-band....
Several metal-insulator-metal (MIM) thin film capacitor models suitable for MMIC design are available in commercial microwave circuit simulators and GaAs foundry process design kits. Although these models are in general accurate for series capacitors arbitrary electrical length, they are somewhat less useful for shunt capacitors over grounding substrate vias. Typically the bottom plate is not available...
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