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In this paper we review recent work on computational paradigms involving coupled relaxation oscillators built using metal-insulator-transition (MIT) devices. Such oscillators made using MIT devices based on Vanadium-Dioxide thin films are very compact and can be realized in hardware. Networks of such oscillators have interesting phase and frequency dynamics which can be programmed to solve computationally...
Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is an emerging memory technology which exhibits non-volatility, high density and nanosecond read and write times. These attributes of STT-MRAM make it suitable for last level embedded caches. However, the defects and corresponding fault models of STT-MRAM are not as extensively explored as in SRAM and therefore, there is a growing need...
Spin transfer torque magnetic random access memory (STT-MRAM) is a competitive, future memory technology for last-level embedded caches. It exhibits ultra-high density (3–4X of SRAM), non-volatility, nano-second Read and Write speeds, and process and voltage compatibility with CMOS. As the design and fabrication process mature for the STT-MRAM, there is a need to study the various fault models that...
In the pursuit for building hardware accelerators to compute optimization problems researchers realize that the challenges in achieving this objective lie not only in implementing the hardware but also in the formulating the computing fundamentals of such designs. Neural network algorithms are considered most suited for this task, as there is usually a direct description of distributed computing entities,...
There has been a significant interest in Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) as a candidate for emerging memory technology for last-level embedded caches in the recent years. High density (3-4x of SRAM), non-volatility, nano-second Read and Write speeds, and process and voltage compatibility with CMOS are the attractive properties of this technology. A few studies have expounded...
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