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A brief overview of NBT stress-induced threshold voltage instabilities in p-channel power vertical double- diffused MOS field-effect transistors (VDMOSFETs) is presented. New approach in estimating the lifetime in NBT stressed p-channel power VDMOSFETs is proposed. The creation of lifetime surface for operating area, which can be useful for determination of device lifetime, operating temperature or...
Threshold voltage shifts observed in commercial p-channel power VDMOSFETs during the NBT stressing are fitted using stretched exponential equation in order to estimate the device lifetime and discuss the impact of stress conditions and choice of extrapolation parameters. Excellent agreement found in later stress phases allowed for an accurate estimation of device lifetime for the lowest stress voltage...
Spontaneous recovery of threshold voltage and channel carrier mobility in DC gate bias stressed power VDMOSFETs, as well as the underlying changes in gate oxide-trapped charge and interface trap densities are presented and analysed in terms of the mechanisms responsible. A chain of mechanisms related to a presence of hydrogen species is proposed to explain the observed changes of oxide-trapped charge...
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