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Integration of GaN high voltage transistors into Silicon CMOS could combine superior electrical parameters of GaN HEMTs and the huge logic functionality of Silicon CMOS. Several issues of a monolithic integration of GaN devices into CMOS like material mismatch and thermal budgets can be overcome by heterogeneous integration by micro Transfer Printing. Results of first printing experiments with small...
Discrete gallium nitride high electron mobility transistors (HEMTs) are fabricated on oriented silicon, then undercut and assembled onto non-native silicon CMOS wafers by elastomer stamp micro-transfer-printing. The thin, less than 5 µm thick, gallium nitride transistors were then electrically interconnected using conventional thin-film metallization processes. Electrical measurements reveal that...
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