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THz technology offers multiple applications in areas such as remote sensing, spectroscopy, biomedical imaging, and ultra-wide bandwidth communications [1]. However, obtaining high-frequency performance at THz frequencies has proven challenging in conventional electronic devices. This difficulty motivated the exploration of unconventional transport mechanisms such as electron plasma waves. Two dimensional...
GaN MOSHEMT or MOSFET on top of conducting (drift layer and drain electrode) layers is a building block for vertical GaN VDMOS power transistors. GaN MOSHEMTs incorporating a polarization-doped p-AlGaN layer as the back barrier on top of conducting layers is named as PolarMOSH. In this work, we present a comparative study of PolarMOSH fabricated on SiC and free-standing GaN substrates. PolarMOSH wafers...
Owing to strong electron-electron interactions, transition metal oxide materials can exhibit multiple phases with vastly different electronic, magnetic, structural, and thermal properties. Reversible control of the transitions between these phases by electronic means can give rise to completely novel devices which can provide new functionalities and help to overcome limits of traditional semiconductor...
Ultra-thin body pseudomorphic GaN-on-Insulator Quantum Well FETs with MBE-regrown contacts have recently been realized as a fundamentally new strategy to create GaN CMOS-like technology that can support scaling down to ∼10 nm, similar to UTBSOI [1]. The demonstration vehicle [2] used AlN-on-Sapphire templates, which have a large lattice mismatch with thick AlN layers, and very poor thermal conductivity...
As GaN HEMTs are scaled down to push performance into 100's of GHz range, it is timely to investigate their performance limits. Unlike Si MOSFETs and most other III–V semiconductor based HEMTs, the electron - polar optical phonon interaction is exceptionally strong in GaN. As a result, the mean free path of hot electrons in GaN is λop ∼ 3.5nm, far shorter than typical HEMT gate lengths (Lg). Thus...
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