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The band-engineered structure design for electron-blocking layer (EBL) and hole-blocking layer (HBL) in AlxGa1–xN-based ultraviolet light-emitting diodes (UV LEDs) is performed and analyzed theoretically. Simulation results show that the severe polarization effect is efficiently mitigated and the downward-bended band profile of the EBL is improved when the EBL is designed with a graded-composition...
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