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The performance of scaled AlGaN/GaN HFETs was significantly improved by using gate-recess technology and regrown n+-GaN Ohmic contacts. Source-to-drain distance (Zsd) was scaled to 600 nm by employing regrown n+-GaN Ohmic contacts. Low-damage gate recess was taken before 60 nm T-shaped gate metallization. The drain current curve becomes flat over knee voltage, and the short-channel effects were suppressed...
Based on Steady State Visual Evoked Potential (SSVEP), a fan control system was designed and realized for the disabled to improve the rehabilitation environment. Four strategies were used in this system. Firstly, we used the visual stimuluses of different frequencies to produce the electroencephalogram (EEG), and the noises were removed from the EEG by wavelet reconstruction, and the control codes...
Pulse transient simulation is very useful for analyzing the mechanism of dynamic current collapse in GaN-based HEMTs. In this paper, the dependency of current collapse on the device structure is analyzed based on the two-dimensional numerical simulation. The turn-on pulse gate-lag transient currents of Al0.3Ga0.7N/GaN HEMTs with different gate lengths and drain-source distances were obtained, and...
Two passivation techniques were applied on AlGaN/GaN high electron-mobility transistors (HEMTs) with thin barrier thickness (12 nm). 5 nm AlN interfacial passivation layer was deposited by plasma enhanced atomic layer deposition (PEALD) before 50 nm SiN protection layer grown by plasma enhanced chemical vapor deposition (PECVD). Compared with traditional SiN passivation, the insertion of AlN could...
Using the same device processing GaN-based High Electron Mobility Transistors (HEMTs) with 90nm T-shaped gate are fabricated on the AlGaN/GaN heterostuctures epitaxially grown on sapphire and SiC substrate, respectively. The DC outputs/transfer and RF characteristics are measured and compared. It's found that the sheet carrier density and electron mobility of AlGaN/GaN heterostucture on SiC substrate...
W-Band High Electron Mobility Transistors (HEMTs) with 100nm gate length were fabricated on the AlGaN/GaN heterostuctures with 22 nm and 18 nm AlGaN barrier layer, respectively. Due to the suppressed short-channel effect, the DC and RF characteristics of AlGaN/GaN HEMT with 18 nm barrier layer are much better than the ones with 22 nm barrier layer. The conclusion can be drown that once the ratio of...
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