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In this work a theoretical concept and simulations are presented for a novel lateral drift-field photodetector pixel to be fabricated in a 0.35μm CMOS process. The proposed pixel consists of a specially designed n-well with a non-uniform lateral doping profile that follows a square-root spatial dependence. “Buried" MOS capacitor-based collection-gate, a transfer-gate, and an n-type MOSFET source/drain...
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