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Implantation-free mesa-etched ultra-high-voltage (0.08 mm2) 4H-SiC bipolar junction transistors (BJTs) with record current gain of 139 are fabricated, measured, and analyzed by device simulation. High current gain is achieved by optimized surface passivation and optimal cell geometries. The area-optimized junction termination extension is utilized to obtain a high and stable breakdown voltage without...
An investigation of the voltage imbalance of the two capacitors of the semi-full-bridge submodule is performed. Since the capacitances are not exactly the same, there may be a difference between the capacitor voltages. The resulting current-spike when they are connected in parallel has been analyzed in a full-scale laboratory experiment.
This paper investigates the benefits of using high-voltage converter cells for transmission applications. These cells employ ultrahigh-voltage SiC bipolar power semiconductors, which are optimized for low conduction losses. The Modular Multilevel Converter with half-bridge cells is used as a test case. The results indicate a reduction of converter volume and complexity, while maintaining low losses...
In this paper, the theoretical performance of ultra-high voltage Silicon Carbide (SiC) based devices are investigated. The SiC semiconductor device conduction power loss and switching power loss are predicted and compared with different modeling approaches, for SiC metal-oxide semiconductor field-effect transistors (MOSFETs) up to 20 kV and SiC gate turn-off (GTO) thyristors and SiC insulated-gate...
The surge current capability of the body-diode of SiC MOSFETs is experimentally analyzed in order to investigate the possibility of using SiC MOSFETs for HVDC applications. SiC MOSFET discrete devices and modules have been tested with surge currents up to 10 times the rated current and for durations up to 2 ms. Although the presence of stacking faults cannot be excluded, the experiments reveal that...
The development of controllable semiconductor switches and Voltage Source Converter (VSC) technologies is rapidly expanding the fields of applications of HVDC and FACTS in power systems. Recent developments in converter technology are focused on Modular Multilevel Converters (MMC). This article deals with loss modeling and its implementation in EMT-type software for three different types of MMC models...
Modelling of Modular Multilevel Converter (MMC) for electromagnetic transient type (EMT-type) simulations is challenging due to numerous IGBTs/diode devices. Detailed models of HVDC-MMC transmission systems require long computation times. Simplified models have been proposed in the past to overcome this problem. However, some of these types of model require a hard-coding development which depends...
The design process of converters usually requires investigations with different abstraction levels. In this paper, an analytical calculation tool for dual-active-bridge DC-to-DC converters is introduced. This tool is used during a pre-simulation design stage. Its calculations are based on idealized current shapes. One of the most important advantages is the high calculation speed: the tool is faster...
Recently, it has been shown that the operating modes of a three-phase dual-active-bridge (3ph-DAB) DC-to-DC converter can be altered. This can be used in particular to enhance low load efficiency. The different operating modes show significant differences concerning the utilization of the core material and the required filter effort. In this paper, an enhanced operating strategy including a dynamic...
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