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Heteroepitaxial growth of orientation‐patterned (OP) GaP (OP‐GaP) on wafer‐bonded OP‐GaAs templates is investigated by low‐pressure hydride vapor phase epitaxy for exploiting the beneficial low two‐photon absorption properties of GaP with the matured processing technologies and higher‐quality substrates afforded by GaAs. –First, GaP homoepitaxial selective area growth (SAG) is conducted to investigate...
The mid-infrared domain (MIR) has recently witnessed a renewed interest for a large range of demanding applications such as spectroscopic detection [1, 2]. However, this region still suffers from a lack of low noise, efficient and fast detectors contrary to the visible or near-infrared regions. This has led to the development of an alternative detection scheme based on sum frequency generation (SFG)...
There is an increasing demand for tunable laser sources in the 8–12 μm spectral range for stand-off detection of chemical traces. In addition to high peak power, fast and wide spectral tunability are required. Among direct sources, external-cavity quantum cascade lasers (EC-QCL) have demonstrated a broad tunability with narrow linewidths and excellent beam quality [1] but their limited peak power...
We investigate nonlinear diffraction in orientation-patterned semiconductors and identify Čerenkov second harmonic generation in a transverse geometry of interaction. Čerenkov second harmonic allows nondestructive 3D visualization of the internal structure of orientation-patterned semiconductor.
We demonstrate a Q-switched thulium-doped fiber laser up to 20 kHz with fast tunability over 100 nm without any movable part. Emitted pulses have energies above 10 µJ and peak powers up to 400 W.
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