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Accurate determination of power losses in semiconductor devices is important for optimal design and reliable operation of a power converter. The switching loss is an important component of the total device loss in an insulated-gate bipolar transistor (IGBT) in a voltage source inverter. The objective here is to study experimentally the influence of junction temperature on the turn-on switching energy...
In traction applications, power electronic converters experience wide variation in DC link voltage during operation. The purpose of this paper is to study the variations in turn-on and turn-off switching energy losses in the IGBTs with the DC link voltage. The IGBT switching characteristics are measured at various operating conditions, and turn-on and turn-off switching energy losses are determined...
Aim of this paper is to study the variations in turn-on and turn-off switching energy losses in the IGBTs with device current at different DC link voltages and junction temperatures. The IGBT switching characteristics are obtained experimentally at various operating conditions, and turn-on and turn-off switching energy losses are determined. The relationship between the switching energy losses and...
Usually the top and bottom IGBT devices in an inverter leg are of the same make (i.e. from same manufacturer). At low power level, these two devices even may be contained in the same module. However at high power levels the top and bottom devices are in separate modules. Sometimes, in the event of device failure, device of particular make may be replaced by one of another make, but of same ratings...
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