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Accurate determination of power losses in semiconductor devices is important for optimal design and reliable operation of a power converter. The switching loss is an important component of the total device loss in an insulated-gate bipolar transistor (IGBT) in a voltage source inverter. The objective here is to study experimentally the influence of junction temperature on the turn-on switching energy...
In this paper focus is to study various transition sub-intervals of an IGBT during switching events. The relationship of these transition duration with the switching voltage, device current and junction temperature is studied experimentally. This study is further extended to understand the effect of these time duration deciding the dead time between the switching of positive and negative devices in...
In this paper the focus is to study the switching characteristic of antiparallel diode in an IGBT module. The switching characteristic parameters reverse recovery time, peak reverse recovery current and corresponding energy loss during the diode turn-off transition are studied experimentally. The relationship of these characteristic parameters with the operating conditions, namely, switching voltage,...
In traction applications, power electronic converters experience wide variation in DC link voltage during operation. The purpose of this paper is to study the variations in turn-on and turn-off switching energy losses in the IGBTs with the DC link voltage. The IGBT switching characteristics are measured at various operating conditions, and turn-on and turn-off switching energy losses are determined...
Aim of this paper is to study the variations in turn-on and turn-off switching energy losses in the IGBTs with device current at different DC link voltages and junction temperatures. The IGBT switching characteristics are obtained experimentally at various operating conditions, and turn-on and turn-off switching energy losses are determined. The relationship between the switching energy losses and...
Usually the top and bottom IGBT devices in an inverter leg are of the same make (i.e. from same manufacturer). At low power level, these two devices even may be contained in the same module. However at high power levels the top and bottom devices are in separate modules. Sometimes, in the event of device failure, device of particular make may be replaced by one of another make, but of same ratings...
Design of reliable power converters requires thorough understanding of the characteristics of semiconductor devices over wide range of operating and environmental conditions. This paper presents experimental investigations on switching characteristics of high-power Insulated Gate Bipolar Transistor (IGBT). The focus of this paper is to study turn-on delay time, turn-off delay time, voltage (dv/dt)...
In traction application, inverters need to have high reliability on account of wide variation in operating conditions, extreme ambient conditions, thermal cycling and varying DC link voltage. Hence it is important to have a good knowledge of switching characteristics of the devices used. The focus of this paper is to investigate and compare switching characteristics and losses of IGBT modules for...
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