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This experimental study reports ESD behavior of novel designs of GaN Schottky diodes. Impact of electro-thermal transport, device degradation and trap generation on its ESD robustness is analyzed. Role of interface traps in ESD failure of GaN Schottky diode is investigated. Transition from sofit-to-hard failure, which is found to depend on diode area, presence of traps and diode design is discussed...
This work is based on performance analysis of Heterojunction Intrinsic Thin Film (H-I-T) solar cells, on n type C-Si substrate using the numerical simulator automat for heterostructure, AFORS-HET. Effect of defect states density, have been considered consistently in p-type, intrinsic and n-type hydrogenated amorphous Silicon. A detailed analysis on band tails and defect states have been analyzed in...
This work is concentrated on developing a model of PIN solar cell with some III–V compound material. Two new compound materials are used in this solar cell. One of them consists of Gallium Indium Phospide (GaInP) and Aluminium (Al), which reached the band-gap energy of 4.30eV with an absorption coefficient of 1.69e-4 cm−1. Another one consists of Gallium Arsenide (GaAs) and Aluminium (Al), reaching...
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