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Reliability of FinFETs is studied in this paper using the forward gated-diode generation-recombination (G-R) current. It is observed that the stress induced interface states result in the shift of the peak G-R current (??Ipeak) in the body current (Ib) versus gate voltage (Vg) characteristic, therefore the variation of interface states with stress time was calculated. In the hot carrier injection...
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