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In this study, impact of traps located at SiO2/Si interface on the time-dependent dielectric breakdown (TDDB) lifetime is investigated by modeling the Weibull distribution in high-k (HK) dielectric stacks. The results show that the interface traps will cause the distortion of Weibull slope of TDDB lifetime, decreasing the growing rate of the probability of breakdown after a long time.
This paper proposed an advanced logarithm cofactor difference operator (LogCDO) method to extract parameters of the MOS devices' post-breakdown current. The experimental results of the post breakdown current in MOS devices at different temperature are used to demonstrate the validity of the advanced LogCDO method. The post-breakdown current is equivalent to a dual diode circuit model, and then the...
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