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Traditional ESD protection program cannot meet requirements of higher ESD protection grade and parasitic parameter of protection devices when using V-by-One high-speed interface chip. This paper proposes an effective ESD protection program by way of reverse analysis and design of a VBO-based high-speed interface chip failure case. The program introduces a new SCR structure replacing the original diode...
A novel capacitance coupling complementary dual-direction silicon-controlled rectifier (SCR) (CCCDSCR) for high-voltage electrostatic discharge protection is proposed and verified in 0.5- BCD process. The trigger voltage of CCCDSCR can be adjusted by coupling capacitance to meet different protection requirements. Compared with traditional lateral double-diffusion NMOS, LDSCR, stacked field-oxide...
Three types of MOS-triggered SCR structures: Merged MOS-triggered SCR, compact MOS-triggered SCR and boundary-MOS-triggered SCR devices have been fabricated and compared in 0.13 μm CMOS process for on-chip ESD protection. TLP testing results show boundary-MOS-triggered SCR structures can achieve adjustable and lower switching voltage, smaller turn-on resistance, faster turn-on speed, the best ESD...
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