The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We have systematically investigated Ge interface passivation methods, and the highest electron (1920 cm2/Vs) and hole mobility (725 cm2/Vs) have been demonstrated by dramatic reduction of Dit through the collaboration of self-passivation and valency passivation. In Si passivation, it is found that Si contributes to the upper half (worse) and lower one (better) in the bandgap differently. This study...
This paper will first discuss intrinsic advantages of high-pressure oxidation of Ge and then present further improvement of electron mobility in Ge n-MISFET using high-k gate stacks combined with high-pressure oxidation. The peak mobility is about 1500 cm2/Vsec, which is the highest one to date among unstrained Si and Ge MISFETs. Ge-CMOS is a strong candidate for beyond Si-CMOS.
In summary, the ~1.5 mum Ge QD MOS LED which is fully compatible with ULSI process is reported for the first time. The origin of the emission is due to the radiative recombination between the electrons and holes confined in the Ge QD. The electrons also recombined with holes at the Si/oxide interface and the band edge light emission from Si is also observed
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.