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This paper introduces a 97% efficiency medium voltage (MV) Solid State Transformer (SST) based on two-level single stage (TLSS) topology and 15 kV SiC MOSFETs. Series resonant converter (SRC) is implemented as the main stage and is identified as a current source (CS) SRC for the first time. Equivalent resonant frequency of the proposed CS-SRC is analyzed in both time domain and frequency domain. Resonant...
An improved SiC MOSFET-gate driver integrated half-bridge module with folded layout using direct bonded copper (DBC) substrate is designed, fabricated, and tested. The bottom layer of the DBC is used as part of the power loop to achieve major reduction in the loop stray inductance. Due to the low parasitic inductance and capacitance, the gate resistor is chosen as zero to reduce the switching loss...
This paper aims to comprehensively investigate the efficiency, power density and overall cost of input series output parallel (ISOP) medium voltage (MV) all silicon carbide (SiC) DC-DC converter in solid state transformers (SST). The medium voltage capability can be achieved by using either high voltage devices or multiple low voltage cells in series. Voltage rating of semiconductor devices, magnetic...
SiC Intelligent Power Module (IPM) with high bandwidth integrated current sensors is a future trend to improve the device protection capability and chip utilization. In this work, an integrated current sensing scheme for Silicon Carbide (SiC) MOSFET power module using a Si MOSFET current mirror is proposed, analyzed and tested. The use of Si MOSFET not only lowers the overall cost, but compensates...
The implementation of a novel bidirectional medium voltage AC-DC converter based on 10kV SiC MOSFET is presented in this paper. The improved topology allows the removal of the reverse blocking silicon diode in medium voltage SiC MOSFET module. Shoot-through problems and avalanche of the integrated silicon diode in traditional medium voltage bridge-type AC-DC converters are solved, allowing zero dead-time...
An improved bidirectional medium voltage AC-DC converter based on 10kV silicon carbide (SiC) MOSFETs for SST (Solid State Transformer) application is presented in this paper. Avalanche breakdown of the reverse blocking silicon diode and bridge arm shoot-through problems in traditional high voltage bridge-type AC-DC converters are solved. Shoot-through currents are limited to low di/dt events that...
Due to the limitation in circuit measurements using current and voltage probes, the conventional ways of measuring switching losses lack the physical insight of the complicated witching process in power devices such as the SiC power MOSFET. This paper seeks to have a better understanding of the dynamic turn-on and turn-off processes of the SiC power MOSFET. Using a detailed finite element simulation...
A 1200V SiC MOSFET-gate driver integrated half-bridge (HB) module using direct bonded copper (DBC) substrate is designed and fabricated for noise free high frequency operation. The layout of the integrated module is carefully designed to eliminate the EMI problem under high switching speed. Due to the significantly reduced stray inductance, the external gate driver resistance can be chosen as zero...
With the commercialization of wide bandgap power devices such as SiC MOSFETs and JBS diodes, power electronics converters used in the harsh environments such as hybrid electric vehicles and aerospace attract more and more attentions. The low loss, high temperature and fast switching capabilities are utilized in the converters to improve the power density and efficiency. However, the EMI problem caused...
An isolated bi-directional soft-switched DC-AC converter with high-frequency-AC (HFAC) link using Silicon Carbide (SiC) MOSFETs is presented in this paper. A unipolar-SPWM oriented modulation technique is proposed to enable the full-bridge (FB) stage to realize zero-voltage-switching (ZVS) and the cycloconverter stage to realize zero-current-switching (ZCS). Furthermore, the proposed modulation technique...
A 6.5 kV 25 A dual IGBT module is customized and packaged specially for high voltage low current application like solid state transformer and its characteristics and losses have been tested under the low current operation and compared with 10 kV SiC MOSFET. Based on the test results, the switching losses under different frequencies in a 20 kVA Solid-State Transformer (SST) has been calculated for...
SiC power devices have very promising future because their ultra low conduction and switching losses and ability of working at high temperatures. SiC MOSFET not only has very low switching loss but also shows no degradation in Rdson at 150??C. In order to achieve ultra low switching loss for SiC BJT, a new drive method is proposed and implemented. These characteristics make SiC power MOSFET/BJT devices...
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