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Built-in electric field of the P-N junction is expected to support the separation and enhance the collection of the charge carriers generated in solar cell absorber. If this is a case, the distribution of the electric field across the solar cell absorber should affect the device performance. Comparative modeling of P-N junction and P-i-N junction solar cells with strongly different distributions of...
Intermediate carrier blocking layers (ICBLs) adjacent to optically active quantum wells (QWs) are used for tailoring the output color spectra in multi-color III-nitride light-emitting diode (LED). We show that the ICBL active region design can efficiently balance the initially asymmetric supply of electrons and holes to optically active QWs and provide tunable LED emission in full visible optical...
Full-color III-nitride light-emitting diode (LED) with complete covering of standard red-green-blue (RGB) optical emission spectrum is demonstrated. Intermediate carrier blocking layers (ICBLs) are introduced into multi-quantum well (MQW) active region of III-nitride multi-color LED to control the carrier injection distribution among the optically active quantum wells (QWs) with different emission...
Lasing threshold conditions have been analyzed in deep-UV (DUV) multiple-QW (MQW) III-nitride laser diode (LD) structures with different QW confinement depth. Shallow QWs with smaller internal polarization fields reveal better QW emission characteristics including lower QW transparency population and higher differential gain. In MQW LD structures, however, the high-gain operation of shallow QWs is...
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